群尚科技有限公司

產品介紹

陶瓷散熱基板 薄膜製程

DPC, direct plate copper, applies techniques in semiconductor thin film process. Various metal circuits and fine trace patterns can be manufactured on the surface of ceramic substrate.

By integrating the heat-dissipation ability of ceramic and the conductivity of metal, ceramic substrate consists of various superior physical properties. The composite thin film process increases the adhesion strength, dimension accuracy and smoothness of circuit trace.

Applications

• 1. High Power LED Package Substrate
• 2. Solar Cell
• 3. Hybrid Electric Vehicles
• 4. Microwave (Wireless Communication)
• 5. Semiconductor Process Equipment

Substrate Physical Properties：

Characteristic Value	AlN	Al2O3 (96%)
Color	Gray	White
Density	3.3 g/cm3	3.7 g/cm3
Thermal Conductivity	≧170 W/mk	～22 W/mk
Coefficient of Thermal Expansion	4.6 x 10-6/℃ (R.T.～400℃)	7.3 x 10-6/℃ (25～800℃)
Dielectric Strength	15 KV/mm>	14 KV/mm (AC 60Hz)
Volume Resistivity	≧1013Ω‧cm	≧1014Ω‧cm (25℃)
Dielectric Constant	9.0 1MHz	9.4 1MHz
Bending Strength	≧330 MPa	≧320 MPa

Specification

Characteristic		ALN	Al2O3 (96%)
Substrate Part	Dimensions	Up to 4.5” x 4.5”	Up to 5” x 5”
	Dimensional Tolerance	±1% NLT ±0.1mm	±0.60%, NLT : ±0.08mm
	Thickness	0.38 / 0.5 / 0.635 mm	0.38 / 0.5 / 0.635 / 1.0 mm
	Thickness Tolerance	±10% >	±10.0%, NLT : ±0.05mm
Metalized Part	Conductive Layer	Cu-Ni-Au / Cu-Ni-Ag / Customized Up to 100μm in Thickness
	Via Hole	φ75μm min
	Pattern Construction	Single Face / Double Face with Via Holes / Customized